advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower on-resistance r ds(on) 36m fast switching characteristic i d 22a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a maixmum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 200807022 1 AP9971AGH/j rohs-compliant product parameter rating drain-source voltage 60 gate-source voltage + 20 continuous drain current, v gs @ 10v 22 continuous drain current, v gs @ 10v 14 pulsed drain current 1 80 total power dissipation 34.7 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9971agj) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - - 36 m ? ?
AP9971AGH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10 v 7.0v 5.0 v 4.5 v v g = 4 .0v 0 10 20 30 40 50 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10 v 7.0v 5.0 v 4.5 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =15a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 20 30 40 50 246810 v gs gate-to-source voltage (v) r ds(on) (m
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9971AGH/j 0 2 4 6 8 10 12 048121620 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds =48v i d =15a q v g 10v q gs q gd q g charge 10 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9971agh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement
package outline : to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.50 0.69 0.88 b2 0.60 0.87 1.14 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 5.20 5.35 5.50 e 6.70 7.00 7.30 e1 5.40 5.80 6.20 e ---- 2.30 ---- f 5.88 6.84 7.80 meet rohs requirement for low voltage mosfet only
|
